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VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 2800 5380 8450 65x103 0.77 0.082 V A A A V m Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA1103-01 Feb. 05 * Patented free-floating silicon technology * Very low on-state losses * High average and surge current. Blocking Maximum rated values 1) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Non-repetitive peak reverse voltage Characteristic values Symbol Conditions VRRM VRSM VRSM f = 50 Hz, tp = 10ms, Tj = 175C f = 5 Hz, tp = 10ms, Tj = 175C f = 50 Hz, tp 5ms, Tj = ...175C Value 2000 2800 3000 Unit V V V Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 175C min typ max 400 Unit mA Tvj = -40C reduces VRSM and VRRM by 5%. Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 63 typ 70 max 77 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 70 kN, Ta = 25 C min 25.7 35 typ max 1.45 26.3 Unit kg mm mm mm Air strike distance Da 14 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 51L2800 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t tp = 8.3 ms, Tj = 175C, VR = 0 V tp = 10 ms, Tj = 175C, VR = 0 V 50 Hz, Half sine wave, TC = 85 C min typ max 5380 8450 65x10 3 Unit A A A A2s A A2s 21.13x10 70x10 6 3 20.34x10 6 Characteristic values Parameter On-state voltage Threshold voltage Slope resistance Symbol Conditions VF V(T0) rT IF = 5000 A, Tj = 175C Tj = 175C IT = 2500...7500 A min typ 1.18 max 0.77 0.082 Unit V V m Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -10 A/s, VR = 200 V IFRM = 4000 A, Tj = 175C min typ max 7000 Unit As Recovery charge ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1103-01 Feb. 05 page 2 of 6 5SDD 51L2800 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min typ max 175 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 63...77 kN Anode-side cooled Fm = 63...77 kN Cathode-side cooled Fm = 63...77 kN Double-side cooled Fm = 63...77 kN Single-side cooled Fm = 63...77 kN -40 min typ 150 max 8 16 16 3 6 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i Rth i(K/kW) i(s) 1 5.364 0.5339 2 1.586 0.0684 3 0.638 0.0067 4 0.412 0.0013 Fig. 1 Transient thermal impedance junction-tocase. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1103-01 Feb. 05 page 3 of 6 5SDD 51L2800 Fig. 2 On-state characteristics. Fig. 3 On-state characteristics. Fig. 4 On-state power losses vs average on-state current. Fig. 5 Max. permissible case temperature vs average on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1103-01 Feb. 05 page 4 of 6 5SDD 51L2800 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. Fig. 8 Recovery charge vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1103-01 Feb. 05 page 5 of 6 5SDD 51L2800 Fig. 9 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr 5SYA 2020 5SYA 2029 5SYA 2036 Titel Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1103-01 Feb. 05 |
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